The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2004

Filed:

Apr. 09, 2002
Applicant:
Inventors:

Junji Kido, Yonezawa-shi, Yamagata, JP;

Akira Yokoi, Fujisawa, JP;

Sadao Kadokura, Hachioji, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract

Disclosed is a method for forming a thin-film layer, such as a metallic film or a transparent conductive film, on a functional organic layer formed from an organic compound, by means of a sputtering method performed at a low discharge voltage and a low gas pressure, without imparting any damage to the surface of the organic layer. The thin-film layer is formed by use of a facing-targets-type sputtering apparatus including a pair of facing targets disposed a predetermined distance away from each other; an electron reflection electrode disposed on the periphery of each target; and magnetic field generation means disposed at the sides of each target. The magnetic field generation means generates a magnetic field extending from one target to the other so as to surround a confinement space provided between the paired targets, as well as a magnetic field having a portion parallel to the surface of each target in the vicinity of a peripheral edge portion of the target. When an AC-DC power containing a DC component and a high-frequency component is supplied as a sputtering power to the apparatus, the thin-film layer can be formed at a lower discharge voltage and a lower gas pressure.


Find Patent Forward Citations

Loading…