The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2004

Filed:

Aug. 29, 2002
Applicant:
Inventors:

Katsura Hirai, Tokyo, JP;

Satoshi Funayama, Tokyo, JP;

Toshiya Eguchi, Tokyo, JP;

Naoto Yamamoto, Tokyo, JP;

Assignee:

Konica Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 5/140 ;
U.S. Cl.
CPC ...
H01L 5/140 ;
Abstract

There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.


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