The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2004
Filed:
Feb. 23, 2001
Theodore H. Fedynyshyn, Sudbury, MA (US);
Roderick R. Kunz, Acton, MA (US);
Michael Sworin, Tyngsboro, MA (US);
Roger Sinta, Woburn, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile