The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2004

Filed:

Dec. 17, 2002
Applicant:
Inventor:

Yukiko Kashiura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1075 ;
U.S. Cl.
CPC ...
H01L 3/1075 ;
Abstract

An optical semiconductor device includes: a photo detector section which includes: a first semiconductor layer of a first conductivity type formed on a surface of a semiconductor substrate of the first conductivity type, a second semiconductor layer of a second conductivity type formed on a surface of the first semiconductor layer, and an antireflection film formed on a surface of the second semiconductor layer and preventing reflection of incident light; and a circuit element section which includes: a circuit element formed on the second semiconductor layer on the semiconductor substrate, and a passivation film covering an uppermost electrode layer among electrode layers constituting the circuit element and formed out of a same material as a material of the antireflection film.


Find Patent Forward Citations

Kashiura, Yukiko. (2004). Photo detector with passivation layer and antireflection layer made of the same material (U.S. Patent No. 6791153). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6791153

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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