The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2004

Filed:

Jun. 27, 2000
Applicant:
Inventors:

Peter M. Fryer, Yorktown Heights, NY (US);

Robert L. Wisnieff, Ridgefield, CT (US);

Takatoshi Tsujimura, Fujisawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/100 ; G02F 1/136 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/100 ; G02F 1/136 ;
Abstract

The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes and disposed at a specified interval above an insulating substrate and formed by printing-and-plating; an a-Si-film disposed for the source and drain electrodes and ; a gate insulating film laminated on the a-Si film ; and a gate electrode 18 laminated on the gate insulating film and formed by printing-and-plating. The a-Si film and the gate insulating film have an offset region that uniformly extends beyond the dimensions of the gate electrode


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