The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
Jan. 10, 2002
Kiyoshi Nakai, Ome, JP;
Hidetoshi Iwai, Fussa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a semiconductor memory device which is intended to have a smaller sense amplifier forming area to match with small-sized bit lines, first bit lines BL (e.g., BL ) are formed on a first layer, and lines M (e.g., M ) are formed on a second layer and connected to the first bit lines in a first connecting area located between a first memory cell area and a sense amplifier area. Second bit lines BL (e.g., BL ) are formed on the first layer, and lines M (e.g., M ) are formed on the second layer and connected to the second bit lines in a second connecting area located between a second memory cell area and the sense amplifier area. As a result, the lines M on the second layer can have a smaller line interval.