The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6790761 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 14, 2004

Filed:

Jan. 10, 2003
Applicant:
Inventor:

Toyokazu Sakata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A semiconductor device having conductive paths separated by cavities is formed by depositing organic spin-on glass between the conductive paths, forming gaps between the organic spin-on glass and the conductive paths, and then removing the organic spin-on glass through the gaps. The gaps may be formed as a dummy pattern of via holes that are misaligned with the conductive paths, so that they extend past the upper surfaces of the conductive paths and form fine slits beside the conductive paths. This method of removing the spin-on glass leaves cavities that are free of unwanted oxide residue and debris, thereby minimizing the capacitive coupling between adjacent conductive paths.


Find Patent Forward Citations

Sakata, Toyokazu. (2004). Method of fabricating a semiconductor device (U.S. Patent No. 6790761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6790761

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