The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
Nov. 22, 2000
Ramachandra Divakaruni, Somers, NY (US);
Russell J. Houghton, Essex Junction, VT (US);
Jack A. Mandelman, Stormville, NY (US);
Wilbur D. Pricer, Charlotte, VT (US);
William R. Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure for forming an emitter in a vertical bipolar transistor includes providing a substrate having a collector layer and a base layer over the collector layer, forming a patterning mask over the collector layer, and filling openings in the mask with emitter material in a damascene process. The CMOS/vertical bipolar structure has the collector, base regions, and emitter regions vertically disposed on one another, the collector region having a peak dopant concentration adjacent the inter-substrate isolation oxide.