The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2004

Filed:

Jul. 23, 2001
Applicant:
Inventors:

Karl A. Belser, San Jose, CA (US);

John H. Jerman, Palo Alto, CA (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 7/24 ;
U.S. Cl.
CPC ...
G11B 7/24 ;
Abstract

Fabrication of an MO disc, the formation of a master pattern of servo and track information, and the subsequent transfer of that pattern to a series of pits and grooves on a substrate. On top of that substrate, at least one sacrificial layer is provided atop a relatively hard layer. The recording stack may be provided with both silicon nitride and silicon dioxide top layers, with the silicon dioxide layer acting as a sacrificial layer to ensure that the hard layer, of silicon nitride, remains at the end of the process. A layer of aluminum or aluminum alloy may be deposited, with the aluminum plugs filling the grooves and pits (created by the embossed servo information) to a level higher than any of the adjacent layers of silicon dioxide, silicon nitride, or similar dielectric layer. Since the polishing rate of aluminum can be far faster than that of the silicon dioxide, then the aluminum can be etched or otherwise removed down to a level equal to or slightly below a planar surface with the silicon dioxide, with the silicon dioxide layer allowing for some small level of over polishing. The silicon nitride layer is protected completely; the silicon dioxide layer partially remains and is partially removed; and the aluminum metal which fills the grooves and pits would rise only to a level substantially equal the very flat top surface of the silicon dioxide.


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