The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
May. 06, 2002
Hiroshi Sugawara, Tokyo, JP;
Toshikatsu Jinbo, Tokyo, JP;
Atsunori Miki, Tokyo, JP;
Takayuki Kurokawa, Tokyo, JP;
Kenichi Ushikoshi, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A non-volatile flash memory ( ) that may have an improved layout freedom is disclosed. Non-volatile flash memory ( ) may include banks (B and B ). Each bank (B and B ) may include memory cell arrays (MCA to MCA ) including a plurality of memory cells (MC) connected to sub bit lines (LB). A plurality of sub bit lines (LB) may be selectively connected to a main bit line (MB) by a group switch (Y S and Y S ). A group of main bit lines (MB) may be disposed over a memory cell array. A group of main bit lines (MB) may be selectively connected to a sense amplifier block (SAB) by a group switch group (Y S and Y S ) and a bank switch group (Y S and Y S ). In this way, a sense amplifier block (SAB) may be shared by a plurality of groups of main bit lines (MB). In this way, layout freedom may be improved.