The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Jun. 26, 2001
Applicant:
Inventors:
Daniel M. Kinzer, El Segundo, CA (US);
Srikant Sridevan, Redondo Beach, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract
A lateral conduction superjunction semiconductor device has a plurality of spaced vertical trenches in a junction receiving layer of P silicon. An N diffusion lines the walls of the trench and the concentration and thickness of the N diffusion and P mesas are arranged to deplete fully in reverse blocking operation. A MOSgate structure is connected at one end of the trenches and a drain is connected at its other end. An N further layer or an insulation oxide layer may be interposed between a P substrate and the P junction receiving layer.