The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2004

Filed:

Oct. 30, 2002
Applicant:
Inventors:

Tetsuro Asano, Oizumi-machi, JP;

Katsuaki Onoda, Ota, JP;

Yoshibumi Nakajima, Ashikaga, JP;

Shigeyuki Murai, Oizumi-machi, JP;

Hisaaki Tominaga, Oizumi-machi, JP;

Koichi Hirata, Ashikaga, JP;

Mikito Sakakibara, Menuma-machi, JP;

Hidetoshi Ishihara, Oizumi-machi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7095 ; H01L 2/947 ;
U.S. Cl.
CPC ...
H01L 2/7095 ; H01L 2/947 ;
Abstract

An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates a portion of a diode at a cathode voltage from a portion of the diode at an anode voltage. Because of the absence of a polyimide layer and trench structures, this planar device configuration results in simpler manufacturing method and improved device characteristics.


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