The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Feb. 28, 2003
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit is supplied into a reaction chamber through a shower head to form an amorphous thin film including a hafnium oxide film (HfO film) on a substrate which is rotating. In the film-modifying step, a radical generated in a reactant activation unit is supplied through the same shower head as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step. By a controller , the film-forming step and the film-modifying step are subsequently repeated two or more times in the same reaction chamber so as to form a semiconductor device.