The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Jul. 17, 2002
Richard C. Gimmi, Gresham, OR (US);
James E. Cossitt, Gresham, OR (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method of applying a layer of a flowable material to a substrate. The substrate is received with a rotatable chuck, and an amount of the flowable material is dispensed on to the substrate. The substrate is spun on the rotatable chuck, thereby spreading the flowable material across the substrate and conveying a surplus amount of the flowable material away from the substrate. An exhaust stream is created with a vacuum source. At least a portion of the surplus amount of the flowable material conveyed away from the substrate is entrained into the exhaust stream, which exhaust stream is conveyed into an exhaust system. A pressure drop is created in the exhaust stream across a vane anemometer within the exhaust system. The blow back of the entrained portion of the surplus amount of the flowable material from a downstream position in the exhaust system to the substrate is thereby reduced. Thus, positioning the vane anemometer in the exhaust system tends to create a sudden and distinct pressure drop across the vane anemometer, which tends to reduce the occurrence of blow back of the flowable material from the portion of the exhaust system that is downstream from the vane anemometer, and which is at a relatively lower pressure, to the portion of the exhaust system that is upstream from the vane anemometer, and which is at a relatively higher pressure, and which is where the substrate is processed.