The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Mar. 20, 2003
Shuyun Zhang, Brookline, MA (US);
Robert Jeffery McMorrow, Concord, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
An amplifier circuit and fabrication method including a bias input node, an RF input node, an RF output node, and a plurality of amplifier cells. Each cell has a plurality of discrete emitter contacts of a first conductivity type, a plurality of discrete base contacts of a second conductivity type and grouped in two or more groups, at least one collector contact of the first conductivity type connected to the RF output node, and a base capacitor for each group having two electrodes: an input electrode coupled to the RF input node and an output electrode coupled to a group of discrete base contacts. There is also a base resistor for each group having an input coupled to the bias input node and an output coupled to a group of discrete base contacts. An emitter resistor is coupled to each discrete emitter contact to provide more effective base ballasting and thermal stability than with a cascode arrangement of HBT transistors.