The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Oct. 14, 2003
Applicant:
Inventors:
Donald J. Sawdai, Redondo Beach, CA (US);
Augusto L. Gutierrez-Aitken, Redondo Beach, CA (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7095 ; H01L 2/947 ; H01L 2/9812 ; H01L 3/107 ; H01L 3/1108 ;
U.S. Cl.
CPC ...
H01L 2/7095 ; H01L 2/947 ; H01L 2/9812 ; H01L 3/107 ; H01L 3/1108 ;
Abstract
A preferred embodiment of the present invention provides a Schottky diode formed from a conductive anode contact, a semiconductor junction layer supporting the conductive contact and a base layer ring formed around at least a portion of the conductive anode contact. In particular, the base layer ring has material removed to form layer material gap (e.g., a vacuum gap) adjacent to the conductive anode contact. A dielectric layer is also provided to form one boundary of the base layer material gap.