The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Nov. 08, 2002
Applicant:
Inventors:
Jun Koyama, Kanagawa, JP;
Hidehito Kitakado, Hyogo, JP;
Masataka Itoh, Nara, JP;
Hiroyuki Ogawa, Nara, JP;
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ;
Abstract
The present invention has provided on a back channel side of the TFT a blocking layer that is formed by laminating a 50 nm to 100 nm thick silicon oxynitride film (A) and a 30 nm to 70 nm thick silicon oxynitride film (B). By forming a lamination structure of such silicon oxynitride films, not only can be the contaminations caused by impurities such as alkali metallic elements from the substrate prevented, but the fluctuations in the electrical characteristics of the TFT can be reduced.