The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Feb. 11, 2003
Applicant:
Inventor:
Katsutoshi Saeki, Miyagi, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
The nonvolatile semiconductor memory device includes a first conductivity-type semiconductor substrate where an active region is created, a floating gate which is formed on the first conductivity-type semiconductor substrate, and a control gate which is formed on the floating gate. A first conductivity-type high concentration diffused region is formed in the non-overlapping region of the floating gate in the active region.
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Saeki, Katsutoshi. (2004). Nonvolatile semiconductor memory device comprising high concentration diffused region (U.S. Patent No. 6784482). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6784482
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile