Semiconductor memory device and method for fabricating the same

Abstract

A memory cell in a DRAM, which is a semiconductor memory device, is provided with a bit line connected to a bit line plug and a local interconnect , over a first interlevel insulating film . A conductor sidewall of TiAlN is formed on side faces of hard mask , upper barrier metal , Pt film and BST film . No contact hole is provided on the Pt film constituting an upper electrode . The upper electrode is connected to an upper interconnect (a Cu interconnect ) via the conductor sidewall , dummy lower electrode , dummy cell plug and local interconnect . The Pt film is not exposed to a reducing atmosphere, and therefore deterioration in characteristics of the capacitive insulating film can be prevented.