The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2004

Filed:

Aug. 08, 2002
Applicant:
Inventors:

Hisashi Ogawa, Osaka, JP;

Yoshihiro Mori, Osaka, JP;

Akihiko Tsuzumitani, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A memory cell in a DRAM, which is a semiconductor memory device, is provided with a bit line connected to a bit line plug and a local interconnect , over a first interlevel insulating film . A conductor sidewall of TiAlN is formed on side faces of hard mask , upper barrier metal , Pt film and BST film . No contact hole is provided on the Pt film constituting an upper electrode . The upper electrode is connected to an upper interconnect (a Cu interconnect ) via the conductor sidewall , dummy lower electrode , dummy cell plug and local interconnect . The Pt film is not exposed to a reducing atmosphere, and therefore deterioration in characteristics of the capacitive insulating film can be prevented.


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