The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Mar. 04, 2002
Shigeki Sakai, Tsukuba, JP;
Kazuo Sakamaki, Nasu-gun, JP;
Other;
Abstract
To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer ( ), a first conductor layer ( ), a ferroelectric layer ( ) and a second conductor layer ( ) on a channel region and is constructed by a structure having a third conductor ( ) and a fourth conductor ( ) respectively laminated on a source region and a drain region, in which the third conductor ( ) and the fourth conductor ( ) are opposed to each other via the first conductor layer ( ) and a second insulator thin film ( ).