The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Dec. 20, 2002
Applicant:
Inventor:
Jeffery Lewis Tallon, York Bay, NZ;
Assignee:
Industrial Research Limited, Lower Hutt, NZ;
Primary Examiner:
Int. Cl.
CPC ...
C04B 3/564 ; C04B / ;
U.S. Cl.
CPC ...
C04B 3/564 ; C04B / ;
Abstract
A method for maximising critical current density (J ) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (T ), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration p≈0.19. HTSC compounds are also claimed.