The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2004

Filed:

Apr. 20, 2001
Applicant:
Inventors:

Yoshihiro Hayashi, Tokyo, JP;

Jun Kawahara, Tokyo, JP;

Hirofumi Ono, Shiga, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract

In order to vaporize an organic monomer at a high temperature and a high saturated vapor pressure in good efficiency and to grow an organic polymer film at a high rate in high vacuum by a plasma polymerization reaction of the resulting organic monomer gas, a liquid divinylsiloxanebisbenzocyclobutene (DVS-BCB) monomer is mixed with a carrier gas, and the mixture is then sprayed on a vaporization vacuum chamber held at a high temperature to form an aerosol made of liquid fine particles of the organic monomer, and a BCB monomer (organic monomer) is instantaneously vaporized via the aerosol to generate a BCB monomer gas (organic monomer gas). Consequently, the aerosol having a large specific surface area has a large vaporization area, and vaporization occurs by heating at a high temperature before a polymerization reaction occurs. Thus, 0.1 g/min or more of the BCB monomer gas can be formed at 200° C. and a high saturated vapor pressure, and a plasma polymerization BCB film can be formed at a high rate which is at least 5 times higher than in the ordinary film formation.


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