The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Dec. 13, 2002
Applicant:
Inventors:
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/141 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/141 ; H01L 2/976 ;
Abstract
This invention provides a capacitor and a method for manufacturing of the same, which are adaptable to preventing a lower electrode from being oxidized at a following thermal process. The capacitor includes: a lower electrode; an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer is formed of at least double nitridation layers; a dielectric layer formed on the oxidation barrier layer; and an upper electrode formed on the dielectric layer.
Oh, Hoon-Jung. (2004). Capacitor with oxidation barrier layer and method for manufacturing the same (U.S. Patent No. 6784100). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6784100
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile