The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Nov. 30, 2001
Jerome J. Cuomo, Cary, NC (US);
N. Mark Williams, Raleigh, NC (US);
Andrew David Hanser, Raleigh, NC (US);
Eric Porter Carlson, Raleigh, NC (US);
Darin Taze Thomas, Raleigh, NC (US);
North Carolina State University, Raleigh, NC (US);
Abstract
A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal M N layer thereon. The template material is removed, thereby providing a free-standing, single-crystal M N article having a diameter of approximately 0.5 inch or greater and a thickness of approximately 50 microns or greater.