The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Feb. 05, 2003
Applicant:
Inventors:
Satoru Wakamatsu, Tokuyama, JP;
Hiroyuki Oda, Tokuyama, JP;
Assignee:
Tokuyama Corporation, Yamaguchi-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
Abstract
A production method of silicon which comprises the steps of bringing a silane into contact with a surface of a substrate so as to cause silicon to be deposited while the surface of the substrate is heated to and kept at a temperature lower than the melting point of the silicon, and raising the temperature of the surface of the substrate so as to cause a portion or all of the deposited silicon to melt and drop from the surface of the substrate and be recovered.
Wakamatsu, Satoru. (2004). Method of manufacturing silicon (U.S. Patent No. 6784079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6784079
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile