The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Aug. 05, 2003
Kee Jeung Lee, Seoul, KR;
Hai Won Kim, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A capacitor is fabricated over a first layer having a first conductive plug formed on a substrate in a semiconductor memory. On the first layer, a silicon nitride film, a first capacitor oxide film, and a second oxide film are sequentially formed. The first and the second oxide films have different wet etch rates. Dry and wet etchings are sequentially performed to the first and second oxide films to form a second contact hole. The second contact hole is then etched. Thereafter, a silicon film and a filler film are sequentially formed on the resultant surface of the structure. A cylindrical storage node electrode is then formed by etching a predetermined portion of the filler film and the silicon film. After removing the remaining filler film and the oxide films, a Ta O dielectric film covering the storage node electrode and a TiN film for an upper electrode are then sequentially formed.