The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Aug. 31, 2000
Applicant:
Inventors:
Toshimitsu Taniguchi, Gunma, JP;
Takashi Arai, Tochigi, JP;
Masashige Aoyama, Gunma, JP;
Kazuhiro Yoshitake, Gunma, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/1336 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/1336 ; H01L 2/976 ; H01L 2/994 ;
Abstract
This invention is characterized in that, a gate electrode F formed on a P-type well via a gate oxide film , a high-concentration N-type source layer and a high-concentration N-type drain layer respectively formed apart from the gate electrode and a low-concentration N-type source layer and a low-concentration H-type drain layer respectively formed so that they respectively surround the N-type source layer and the N-type drain layer and respectively parted by a P-type body layer formed under the gate electrode F are provided.