The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2004

Filed:

Apr. 02, 2003
Applicant:
Inventors:

Naoya Hasegawa, Niigata-ken, JP;

Eiji Umetsu, Niigata-ken, JP;

Naohiro Ishibashi, Niigata-ken, JP;

Masahiro Oshima, Niigata-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/900 ; G11B 5/33 ; H01F 3/08 ; C23C 1/400 ;
U.S. Cl.
CPC ...
B32B 1/900 ; G11B 5/33 ; H01F 3/08 ; C23C 1/400 ;
Abstract

First electrode layers are formed on second antiferromagnetic layers, and in a step separate from the above, second electrode layers are formed above internal end surfaces of the second antiferromagnetic layers and the first electrode layers and parts of the upper surface of the multilayer film with an additional film provided therebetween. Since the first and the second electrode layers are formed separately, it is not necessary to perform mask alignment twice, and hence an overlap structure can be precisely formed in which the thickness of the second electrode layer at the left side is equivalent to that at the right side.


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