The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Apr. 18, 2002
Kazuhiko Asakawa, Kanagawa, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device is fabricated by a method that includes forming a conductive pattern on a semiconductor substrate, covering the conductive pattern with a dielectric layer, and planarizing the dielectric layer by chemical-mechanical polishing. To avoid global height differences, a dummy pattern is added to the conductive pattern if a predetermined condition is satisfied. The condition is based on the calculated density of the conductive pattern in a region including the region in which the dummy pattern is to be added. The calculated density may be adjusted according to the type of equipment used to deposit the dielectric layer, and the dummy pattern dimensions may be adjusted according to the calculated density. Such calculations avoid the need for human judgment and lead to more uniform planarization.