The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2004

Filed:

Sep. 26, 2002
Applicant:
Inventors:

Kazuhiko Takahashi, Tokyo, JP;

Shinzo Sakuma, Tokyo, JP;

Shoichi Kokubo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/122 ; G11C 2/900 ;
U.S. Cl.
CPC ...
G11C 1/122 ; G11C 2/900 ;
Abstract

To shorten the time of a test for detecting deteriorated capacitors, a semiconductor memory device having a 2T2C type memory cell structure is designed in such a way that a voltage VBL of a bit line pair which determines a voltage to be applied to ferroelectric memory cells and a voltage VPL of plate lines are so set as to satisfy a relationship of VBL&equals;VPL<VDD where VDD is a supply voltage. This makes the size of the hysteresis loop of the ferroelectric capacitors smaller than that in case of VBL&equals;VPL&equals;VDD, a potential difference &Dgr;V between data &ldquo;0&rdquo; and data &ldquo;1&rdquo; can be made smaller than an operational margin of a sense amplifier. This makes it possible to detect a deteriorated ferroelectric capacitor without conducting a cycling test.


Find Patent Forward Citations

Loading…