The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Dec. 06, 2002
Greg D. U'Ren, Corona del Mar, CA (US);
Klaus F. Schuegraf, Aliso Viego, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
According to one exemplary embodiment, a heterojunction bipolar transistor is fabricated by forming a metastable epitaxial silicon-germaniuim base on a collector. The metastable epitaxial silicon-germanium base, for example, may have a concentration of germanium greater than 20.0 atomic percent of germanium. The heterojunction bipolar transistor, for example, may be an NPN silicon-germanium heterojunction bipolar transistor. According to this exemplary embodiment, the heterojunction bipolar transistor is further fabricated by fabricating an emitter over the metastable epitaxial silicon-germanium base. The heterojunction bipolar transistor is further fabricated by doping the emitter with a first dopant. The first dopant, for example, may be arsenic. The heterojunction bipolar transistor is further fabricated by heating the metastable epitaxial silicon-germanium base in a spike anneal process so as to maintain the metastable epitaxial silicon-germanium base as a strained crystalline structure after the spike anneal process and so as to diffusion the first dopant to form emitter-base junction.