The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Apr. 09, 2003
Applicant:
Inventors:
Elmer L. Turner, Jr., Grapevine, TX (US);
Yong-Fa Alan Wang, Coppell, TX (US);
Assignee:
Teccor Electronics, LP, Irving, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/974 ; H01L 2/1332 ;
U.S. Cl.
CPC ...
H01L 2/974 ; H01L 2/1332 ;
Abstract
A semiconductor device with two epitaxial layers formed on a substrate. The middle layer of epitaxial material can be formed thin and with an appropriate doping concentration to provide a low avalanche breakdown voltage with a negative resistance characteristic. The top layer of epitaxial material is doped with the same concentration as the substrate to provide a two-terminal thyristor device with symmetrical bidirectional operating characteristics.