The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Jul. 29, 2002
Applicant:
Inventors:
Hideo Nakagawa, Kyoto, JP;
Eiji Tamaoka, Hyogo, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
After an organic insulating film has been deposited over a semiconductor substrate, a silylated layer is formed selectively on the organic insulating film. Then, the organic insulating film is etched using the silylated layer as a mask, thereby forming an opening, which will be a via hole or interconnection groove, in the organic insulating film.
Nakagawa, Hideo. (2004). Method for fabricating semiconductor device (U.S. Patent No. 6780778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6780778
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile