The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Aug. 26, 2002
Mark A. Gajda, Stockport, GB;
Michael A. A. in 't Zandt, Veldhoven, NL;
Erwin A. Hijzen, Blanden, BE;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
In a cellular power MOSFET or other semiconductor device, a wide connection across the perimeter of an active device area ( ) is replaced with a plurality of narrower conducting fingers ( ). The fingers ( ) are used as follows in providing a doped edge region ( ) that is required below the connection ( ). Dopant ( ) is implanted at spaces ( ) between and beside the fingers ( ) and is diffused to form a single continuous region ( ) extending beneath the fingers ( ) and at the spaces ( ) therebetween. This doped edge region ( ) may be, for example, a deep guard ring in an edge termination of a power MOSFET, or an extension of its channel-accommodating region ( ). A trench-gate network ( ) of the MOSFET can be connected by the conducting fingers to a gate bond pad and/or field plate ( ).