The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Aug. 27, 2002
Applicant:
Inventor:
Randy D. Redd, Chandler, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ; H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ; H01L 2/100 ;
Abstract
An etch stop layer ( ) is formed over a semiconductor substrate ( ). An epitaxial layer ( ) is formed overlying the etch stop layer ( ). The combination of the epitaxial layer ( ), etch stop layer ( ), and semiconductor substrate ( ) form a composite substrate ( ). The composite substrate ( ) is processed to fabricate a semiconductor device ( ) over the epitaxial layer ( ). Then the composite substrate ( ) is mounted to a wafer carrier ( ) to expose the semiconductor substrate ( ) and the semiconductor substrate ( ) is removed to substantially define a semiconductor device substrate ( ) that comprises the epitaxial layer ( ).