The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Jan. 23, 2002
Katsuhito Sasaki, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing an LDMOS transistor includes providing a semiconductor substrate of a first conductivity type having a well region of a second conductivity type formed on a surface of the substrate. Ions of the first conductivity type are implanted into a part of the well region with a predetermined energy. The substrate is subjected to a heat treatment so that the implanted ions are diffused to form a diffusion region of the first conductivity type on the surface of the substrate. Then, a gate oxide layer and a gate electrode are formed on the surface of the substrate. Finally, a drain region is formed on the surface of the substrate. The predetermined energy for the implantation is set so that an accelerated oxidation during a formation of the gate oxide layer is inhibited.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile