The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2004

Filed:

Dec. 08, 1999
Applicant:
Inventors:

Shigeo Ohsaka, Yamanashi-ken, JP;

Shinichi Domoto, Yamanashi-ken, JP;

Nobumasa Okada, Yamanashi-ken, JP;

Assignee:

Fujitsu Quantum Devices Limited, Yamanashi-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01S 5/00 ; H01L 2/940 ;
Abstract

An electrode structure includes a conductive film formed on a base substrate through an insulation film. The insulation film comprises a plurality of poles of polyimide, a first film formed on the side surfaces of the poles and formed of an insulation material of a high hardness than polyimide, and a second film of polyimide buried among the plural poles with the first film formed on the side surfaces thereof. Because of the first film of an insulation material having high hardness formed on the side surfaces of the poles of polyimide, even when a strong force is applied upon the bonding, the poles are prevented from being distorted, and the conductive film is protected from peeling off. Because of the thick polyimide layer below the conductive film, a parasitic capacity between the conductive film and the lower layer can be small, whereby radio-frequency signals can be used.


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