The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Aug. 29, 2002
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract
A nonvolatile memory cell in the form of an SRAM is composed of ferroelectric capacitors and transistors for amplification. The memory cell comprises a first capacitor (FC ) connected between a first terminal (ND ) and a common terminal (CP). A second capacitor (FC ) is connected between a second terminal (ND ) and the common terminal. A first transistor (N ) has a current path connected between the first terminal and a reference terminal (GND) and has a control terminal connected to the second terminal. A second transistor (N ) has a current path connected between the second terminal and the reference terminal and has a control terminal connected to the first terminal.