The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6778268 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 17, 2004

Filed:

Oct. 09, 2001
Applicant:
Inventors:

Bhanwar Singh, Morgan Hill, CA (US);

Bharath Rangarajan, Santa Clara, CA (US);

Michael K. Templeton, Atherton, CA (US);

Assignee:

Advanced Micro Devices, Sinc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/155 ; G01N 2/100 ; C23F 1/00 ; G01V 3/12 ; G03F 9/00 ;
U.S. Cl.
CPC ...
G01N 2/155 ; G01N 2/100 ; C23F 1/00 ; G01V 3/12 ; G03F 9/00 ;
Abstract

An in-line system and method for determining T-top gate dimensions is provided. The system comprises a wafer structure undergoing a T-top gate formation process; a scatterometry system coupled to the formation process for directing light at and collecting reflected light from the wafer structure; a signature store; a T-top gate formation analysis system coupled to the scatterometry system and to the signature store for determining the T-top gate dimensions; and a feedback control system coupled to the T-top gate formation analysis system for optimizing T-top gate formation. The method comprises providing a wafer structure having a T-top gate formed thereon; generating a signature associated with the T-top gate; comparing the generated signature with a signature store to determine the dimensions of the T-top gate; if the dimensions of the T-top gate are not within a pre-determined acceptable range, then adjusting T-top gate process parameters using feedback control.


Find Patent Forward Citations

Singh, Bhanwar. (2004). System and method for process monitoring of polysilicon etch (U.S. Patent No. 6778268). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6778268

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