The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Jan. 05, 2001
Renesas Technology Corp., Tokyo, JP;
Abstract
P wells ( ) having different impurity profiles are adjacently formed in a surface ( S) of a semiconductor substrate ( ). A P-type layer ( ) having lower resistivity than the P wells ( ) is formed in the surface ( S) across the P wells ( ), so that the P wells ( ) are electrically connected with each other through the P-type layer ( ). Contacts ( ) fill in contact holes ( H H ) formed in an interlayer isolation film ( ) respectively in contact with the P-type layer ( ). The contacts ( ) are connected to a wire ( ). The wire ( ) is connected to a prescribed potential, thereby fixing the P wells ( ) to prescribed potentials through the contacts ( ) and the P-type layer ( ). Thus, the potentials of the wells can be stably fixed and the layout area of elements for fixing the aforementioned potentials can be reduced.