The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Jan. 18, 2002
Applicant:
Inventors:
Joseph A. Yedinak, Mountaintop, PA (US);
Jack E. Wojslawowicz, Bayonne, NJ (US);
Bernard J. Czeck, Mocanaqua, PA (US);
Robert D. Baran, Plains, PA (US);
Douglas Lange, Mountaintop, PA (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
Abstract
An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer & N drift region.