The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Mar. 27, 2003
Mitsuhiko Kitagawa, Tokyo, JP;
Yoshiaki Aizawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layer and a n-type source layer selectively formed on the surface of the p-type base layer . A n-type drain layer is formed in a position apart from the p-type base layer . On the surface of the region between the p-type base layer and the n-type drain layer , a n-type drift semiconductor layer and a p-type drift semiconductor layer are alternately arranged from the p-type base layer to the n-type drain layer . Further, in the region between the n-type source layer and the n-type drain layer , a gate electrode is formed via a gate insulating film . With the structure, the neighboring region of the gate electrode is depleted by a built in potential between the n-type drift semiconductor layer and the p-type drift semiconductor layer or by the potential of the gate electrode, when the gate electrode, source electrode, and drain electrode are at 0 potential.