The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
May. 17, 2002
Kee Jeung Lee, Seoul, KR;
Dong Jun Kim, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon, KR;
Abstract
Disclosed are a capacitor for semiconductor capable of increasing storage capacitance as well as preventing leakage current and a method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The surface of the lower electrode is surface-treated so as to prevent a natural oxide layer from generating on the surface thereof. A (TaO) (TiO)N layer as a dielectric is deposited on the upper part of the lower electrode. Afterwards, to crystallize the (TaO) (TiO)N layer, a thermal-treatment is performed. Next, an upper electrode is formed on the upper part of the (TaO) (TiO)N layer.