The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Oct. 10, 2002
Yuan-Liang Wu, Tainan Hsien, TW;
Chin-Jung Kuo, Kaohsiung Hsien, TW;
Chi Mei Optoelectronics Corporation, Tainan County, TW;
Abstract
A storage capacitor structure comprising a first capacitor electrode over a substrate, a capacitor dielectric layer over the first capacitor electrode and a second capacitor electrode over the capacitor dielectric layer, a passivation layer over the second capacitor electrode and a pixel electrode layer over the passivation layer. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer has a protruding section that permits electrical connection with the second capacitor electrode through the opening in the passivation layer. If the first capacitor electrode and the second capacitor electrode are in short circuit, the protruding section may be cut to detach the pixel electrode layer from the second capacitor electrode.