The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Apr. 24, 2002
Tomohiro Ishikawa, Tokyo, JP;
Hirofumi Yagi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An infrared detector includes a semiconductor substrate having a hollow, a single crystal silicon thin film opposite the hollow at a distance from the semiconductor substrate, thermoelectric converters embedded in the single crystal silicon thin film and converting heat energy generated by infrared light irradiating the single crystal silicon thin film into an electric signal, a first connecting layer embedded in the single crystal silicon thin film and electrically connecting the thermoelectric converters to each other and a second connecting layer for transmitting the electric signal output by the thermoelectric converters to a wire in the semiconductor substrate. In the infrared detector, at least one of the first and second connecting layers is a silicon compound.