The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Jan. 24, 2003
Young-Dae Kim, Seoul, KR;
Abstract
A method for fabricating a semiconductor device comprises forming a material layer on a wafer having a plurality of independent pattering regions, and patterning the material layer to form a material pattern. The material layer is patterned such that the material patterns have different line widths in a plurality of the independent patterning regions. Pattering the material layer comprises a plurality of photolithographic processes or a plurality of etching processes, which are separately applied to each of the patterning regions. The photolithographic processes are preferably applied to each of the independent pattering regions using different reticles. The reticles have different line widths and circuit patterns of the same design. The etching processes are preferably applied to each of the independent pattering regions using different etch recipes.