The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Apr. 16, 2003
Daisuke Ryuzaki, Kokubunji, JP;
Takeshi Furusawa, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.