The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
May. 01, 2003
Applicant:
Inventor:
Joseph E. Van Nostrand, Xenia, OH (US);
Assignee:
The United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/13205 ;
Abstract
A method of controlling the resistivity of gallium nitride is disclosed. The method incorporates an MBE system and utilizes solid source gallium, gaseous source nitrogen and solid source Buckminster Fullerene C as a carbon dopant for the GaN film. A desired, predetermined GaN film resistivity can be created during the growth process by selecting the temperature of the effusion cell containing the C within a predetermined range so as to impart the desired resistivity in the GaN film.