The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Sep. 11, 2002
Applicant:
Inventors:
Kee-Jeung Lee, Ichon, KR;
Byung-Seop Hong, Ichon, KR;
Assignee:
Hynix Semiconductor Inc., Ichon, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method for fabricating a semiconductor device is disclosed. A spacer is formed on the sidewall of the contact hole in which a storage node contact plug is buried. An etch barrier film and an insulating film are sequentially formed after the formation of the storage node contact plug. The insulating film and the etch barrier film are sequentially etched to form an opening part. Then a storage node is formed within the opening part which has been formed by an etching. Then prominences are formed on the surface of the storage node.