The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Sep. 13, 2002
Catharina Huberta Henrica Emons, Nijmegen, NL;
Henricus Godefridus Rafael Maas, Eindhoven, NL;
Theodorus Martinus Michielsen, Eindhoven, NL;
Ronald Dekker, Eindhoven, NL;
Antonius Johannes Janssen, Nijmegen, NL;
Ingrid Annemarie Rink, Nijmegen, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A method of examining a wafer of crystalline semiconductor material by means of X-rays, in which method a surface of the wafer is scanned by means of an X-ray beam and secondary radiation generated by said X-ray beam is detected. Prior to the examination the surface of the wafer which is to be scanned by the X-ray beam during the examination is glued to a substrate, after which crystalline semiconductor material is removed at the side which is then exposed, removal taking place as far as the top layer which adjoins the surface. The top layer can thus be examined without the examination being affected by crystal defects or impurities present in layers of the wafer which are situated underneath the top layer.